30F124 GT30F124 IGBT TO 220 Baru New 100% Original 300V 200Amp DATA SHeet Pin Out schematic x sus, y sus y buffers. 30f124 gt30f124 igbt Element Solder SS 936D C1321 5 PIN compatible untuk: solder SS 936D ini test. Shop from the world's largest selection and best deals for Toshiba TV Boards, Parts and Components. 2 Pieces of GT30F124 30F124 Toshiba Transistor 200V 30A + USA.

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Part Number: 30F124, GT30F124 Function: Discrete IGBT – 300V 200A Package: TO-220SIS Type Manufacturers: Image: Features of the Toshiba Discrete IGBTs The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on. (1) IGBTs also featuring fast switching (2) Low collector-emitter saturation voltage even in the large current area (3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications (4) High input impedance allows voltage drives (5) Available in a variety of packages 30F124 300V 200A.

Silicon N Channel IGBT High speed power switching Features 1. Trench gate and thin wafer technology (G6H-II series) 2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ 3. High speed switching: tf = 100 ns typ, tf = 180 ns typ 4. Low leak current: ICES = 1 A max Absolute Maximum Ratings (Ta = 25°C) 1. Collector to Emitter voltage VCES 360 V 2.

Gate to Emitter voltage VGES ±30 V 3. Collector current Ic 35 A 4. Collector peak current ic(peak) Note1 250 A 5. Collector dissipation PC 60 W 6.

Junction to case thermal impedance j-c 2.08 °C/ W 7. Junction temperature Tj 150 °C RJP30H2A Datasheet PDF Reference Datasheet: RJP30H2DPK-M0 Related articles across the web • •.